| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime a 文件：163.98 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40 efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Guaranteed Performance at 1.99 G 文件：83.73 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50 efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 1.5 GHz, 28 Volts 文件：337.74 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime 文件：324.91 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. ? 文件：141.54 Kbytes 頁數(shù)：4 Pages | ERICSSON 愛立信 | ERICSSON | ||
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a 文件：420.28 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device 文件：263.22 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization 文件：291.84 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50 efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. ? INTERNALLY MATCHED ? Performance at 8 文件：177.07 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. ? I 文件：318.85 Kbytes 頁數(shù)：7 Pages | ERICSSON 愛立信 | ERICSSON |
技術(shù)參數(shù)
- 電流：
10A
- 尺寸：
--
- 熔斷特性：
--
- 安規(guī)：
UL
- 環(huán)保：
--
- 兼容規(guī)格：
--
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
25+ |
SOT6 |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電! |
詢價(jià) | |||
ST |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
INFINEON |
0625/0707 |
DIP |
1265 |
全新原裝現(xiàn)貨絕對(duì)自己公司特價(jià)庫 |
詢價(jià) | ||
murata |
13+ |
NA |
1358 |
原裝分銷 |
詢價(jià) | ||
TI |
25+ |
PQFP-100 |
1740 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價(jià) | ||
INFINEON |
25+ |
陶瓷高頻管 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
ERICSSON |
23+ |
TO-62 |
600 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
TI |
24+ |
QFP100 |
900 |
現(xiàn)貨供應(yīng) |
詢價(jià) | ||
ERICSSON |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
MURATA |
24+ |
200/包 |
400 |
原裝進(jìn)口現(xiàn)貨/只做原裝 |
詢價(jià) |
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