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                >PTF>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          PTF080101S
          LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
          
Description
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
  - Average output power 
          文件：64.14 Kbytes 頁數(shù)：4 Pages
          INFINEON
          英飛凌
          

          PTF080101S
          Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
          
Description
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
  - Average output power 
          文件：172.75 Kbytes 頁數(shù)：9 Pages
          INFINEON
          英飛凌
          

          PTF080451
          LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
          
Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA  applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


Features

? Broadband internal matching

? Typical EDGE performance

- A
          文件：158.52 Kbytes 頁數(shù)：9 Pages
          INFINEON
          英飛凌
          

          PTF080451E
          LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
          
Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA  applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


Features

? Broadband internal matching

? Typical EDGE performance

- A
          文件：158.52 Kbytes 頁數(shù)：9 Pages
          INFINEON
          英飛凌
          

          PTF080601
          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
          
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：293.73 Kbytes 頁數(shù)：6 Pages
          INFINEON
          英飛凌
          

          PTF080601A
          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
          
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：293.73 Kbytes 頁數(shù)：6 Pages
          INFINEON
          英飛凌
          

          PTF080601E
          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
          
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：293.73 Kbytes 頁數(shù)：6 Pages
          INFINEON
          英飛凌
          

          PTF080601F
          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
          
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：293.73 Kbytes 頁數(shù)：6 Pages
          INFINEON
          英飛凌
          

          PTF080901
          LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
          
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：205.95 Kbytes 頁數(shù)：10 Pages
          INFINEON
          英飛凌
          

          PTF080901E
          LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
          
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
? Broadband internal matching
? Typical EDGE performance
- Average output
          文件：205.95 Kbytes 頁數(shù)：10 Pages
          INFINEON
          英飛凌
          

          
            
          
		
        
          
            
          
                
          技術參數(shù)
          
            
          
            
            
            	
          • 電流：
            10A
          • 尺寸：
            --
          • 熔斷特性：
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          • 安規(guī)：
            UL
          • 環(huán)保：
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          • 兼容規(guī)格：
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          供應商型號品牌批號封裝庫存備注價格
          
                
          



          		

          25+
          		

          SOT6
          		

          3629
          		

          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          		
詢價
          

          



          ST
          		

          12+
          		

          TO-251
          		

          15000
          		

          全新原裝,絕對正品,公司現(xiàn)貨供應。
          		
詢價
          

          



          INFINEON
          		

          0625/0707
          		

          DIP
          		

          1265
          		

          全新原裝現(xiàn)貨絕對自己公司特價庫
          		
詢價
          

          



          murata
          		

          13+
          		

          NA
          		

          1358
          		

          原裝分銷
          		
詢價
          

          



          TI
          		

          25+
          		

          PQFP-100
          		

          1740
          		

          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          		
詢價
          

          



          INFINEON
          		

          25+
          		

          陶瓷高頻管
          		

          18000
          		

          原廠直接發(fā)貨進口原裝
          		
詢價
          

          



          ERICSSON
          		

          23+
          		

          TO-62
          		

          600
          		

          專營高頻管模塊,全新原裝!
          		
詢價
          

          



          TI
          		

          24+
          		

          QFP100
          		

          900
          		

          現(xiàn)貨供應
          		
詢價
          

          



          ERICSSON
          		

          17+
          		

          NA
          		

          6200
          		

          100%原裝正品現(xiàn)貨
          		
詢價
          

          



          MURATA
          		

          24+
          		

          200/包
          		

          400
          		

          原裝進口現(xiàn)貨/只做原裝
          		
詢價
          

            
          
        
          
        
          更多PTF供應商
            更新時間2026-1-20 12:02:00
        
          
        
          
          
          
            
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