| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re 文件：206.33 Kbytes 頁數：10 Pages | INFINEON 英飛凌 | INFINEON | ||
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS? FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical WCDMA performance - Average ou 文件：276.3 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out 文件：337.85 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out 文件：337.85 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out 文件：337.85 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier WCDMA performance 文件：406.9 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier WCDMA performance 文件：406.9 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier 3GPP WCDMA perfo 文件：266.34 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier 3GPP WCDMA perfo 文件：266.34 Kbytes 頁數：8 Pages | INFINEON 英飛凌 | INFINEON | ||
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal 文件：449.03 Kbytes 頁數：9 Pages | INFINEON 英飛凌 | INFINEON |
技術參數
- 電流：
10A
- 尺寸：
--
- 熔斷特性：
--
- 安規(guī)：
UL
- 環(huán)保：
--
- 兼容規(guī)格：
--
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
25+ |
SOT6 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | |||
INFINEON/英飛凌 |
25+ |
QFN |
8880 |
原裝認準芯澤盛世！ |
詢價 | ||
TI/德州儀器 |
24+ |
TQFP |
1500 |
只供應原裝正品 歡迎詢價 |
詢價 | ||
OmronAutomation |
新 |
1670 |
全新原裝 貨期兩周 |
詢價 | |||
OMRON |
23+ |
DIP |
51 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEO |
25+ |
NA |
504 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MURATA/村田 |
23+ |
DIP-2 |
50000 |
只做原裝正品 |
詢價 | ||
INFINEON |
24+ |
H-36265-2 |
8000 |
原廠原裝，價格優(yōu)勢，歡迎洽談！ |
詢價 | ||
INFINEO |
23+ |
SMD |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
ST |
12+ |
TO-251 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 |
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