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                >PTF>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          PTF10020
          125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
? INTERNALLY MATCHED
? Performance at 960 MHz, 28 Vol
          文件：313.72 Kbytes 頁數(shù)：6 Pages
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          PTF10021
          30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization e
          文件：278.76 Kbytes 頁數(shù)：6 Pages
          ERICSSON
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          PTF10031
          50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? Performance at 960 MHz, 28 V
          文件：215.59 Kbytes 頁數(shù)：6 Pages
          ERICSSON
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          PTF10036
          85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? INTERNALLY MATCHED
? Performance at 960 MHz, 28
          文件：220.97 Kbytes 頁數(shù)：6 Pages
          ERICSSON
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          PTF10043
          12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab
          文件：235.44 Kbytes 頁數(shù)：6 Pages
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          PTF10045
          30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
? Perfor
          文件：207.22 Kbytes 頁數(shù)：6 Pages
          ERICSSON
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          PTF10048
          30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
          
Description
The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40 efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? INTERNAL
          文件：233.65 Kbytes 頁數(shù)：6 Pages
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          PTF10052
          35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? Performance at 960 MHz, 28 V
          文件：498.65 Kbytes 頁數(shù)：6 Pages
          ERICSSON
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          PTF10053
          12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40 efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? Guaranteed Performance 
          文件：81.07 Kbytes 頁數(shù)：6 Pages
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          PTF10065
          30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
          
Description
The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
? INTERNALLY MATCHED
? Guaranteed Pe
          文件：94.88 Kbytes 頁數(shù)：6 Pages
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          25+
          		

          SOT6
          		

          3629
          		

          原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!
          		
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          ST
          		

          12+
          		

          TO-251
          		

          15000
          		

          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          		
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          OmronAutomation
          		

          新
          		

          		

          1670
          		

          全新原裝 貨期兩周
          		
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          TI/德州儀器
          		

          25+
          		

          TQFP100
          		

          160
          		

          全新原裝正品支持含稅
          		
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          INFINEO
          		

          23+
          		

          SMD
          		

          8560
          		

          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          		
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          INFINEON
          		

          0625/0707
          		

          DIP
          		

          1265
          		

          全新原裝現(xiàn)貨絕對(duì)自己公司特價(jià)庫(kù)
          		
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          原廠
          		

          2023+
          		

          模塊
          		

          600
          		

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          MEAS
          		

          2020
          		

          SMD
          		

          6698
          		

          		
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          Diptronics(圜達(dá))
          		

          23+
          		

          SMD,3.5x4.7mm
          		

          2335
          		

          原裝現(xiàn)貨/專做開關(guān)15年
          		
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          Omron
          		

          2010+
          		

          N/A
          		

          60
          		

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            更新時(shí)間2026-1-20 15:18:00
        
          
        
          
          
          
            
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