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首頁(yè) >PTF>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
PTF180101S	文件：310.59 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB 文件：310.59 Kbytes 頁(yè)數(shù)：10 Pages	INFINEON 英飛凌	INFINEON
PTF180101S	文件：209.3 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB 文件：209.3 Kbytes 頁(yè)數(shù)：10 Pages	INFINEON 英飛凌	INFINEON
PTF180601	文件：233.46 Kbytes Page：11 Pages	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two-tone performance - Average output power = 文件：233.46 Kbytes 頁(yè)數(shù)：11 Pages	INFINEON 英飛凌	INFINEON
PTF180601C	文件：233.46 Kbytes Page：11 Pages	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two-tone performance - Average output power = 文件：233.46 Kbytes 頁(yè)數(shù)：11 Pages	INFINEON 英飛凌	INFINEON
PTF180601E	文件：233.46 Kbytes Page：11 Pages	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two-tone performance - Average output power = 文件：233.46 Kbytes 頁(yè)數(shù)：11 Pages	INFINEON 英飛凌	INFINEON
PTF181301	文件：66.39 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o 文件：66.39 Kbytes 頁(yè)數(shù)：4 Pages	INFINEON 英飛凌	INFINEON
PTF181301A	文件：66.39 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o 文件：66.39 Kbytes 頁(yè)數(shù)：4 Pages	INFINEON 英飛凌	INFINEON
PTF191601	文件：61.2 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o 文件：61.2 Kbytes 頁(yè)數(shù)：4 Pages	INFINEON 英飛凌	INFINEON
PTF191601E	文件：206.33 Kbytes Page：10 Pages	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re 文件：206.33 Kbytes 頁(yè)數(shù)：10 Pages	INFINEON 英飛凌	INFINEON
PTF191601E	文件：61.2 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o 文件：61.2 Kbytes 頁(yè)數(shù)：4 Pages	INFINEON 英飛凌	INFINEON

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市佳鑫美電子科技有限公司	PTF		25+	SOT6	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電!	詢價(jià)
深圳市勤思達(dá)科技有限公司	PTFE2944	ST	12+	TO-251	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
上海金慶電子技術(shù)有限公司	PTF08A-E	OmronAutomation	新		1670	全新原裝貨期兩周	詢價(jià)
深圳市創(chuàng)盛芯科技有限公司	PTFP7445PZP-6	TI/德州儀器	25+	TQFP100	160	全新原裝正品支持含稅	詢價(jià)
深圳市華來(lái)深電子有限公司	PTF10107R2	INFINEO	23+	SMD	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	PTF080901E	INFINEON	23+	SOT-502A	5000	原裝正品,假一罰十	詢價(jià)
華富測(cè)量(深圳)傳感技術(shù)有限公司	PTF102015.。.謝頻管	原廠	2023+	模塊	600	專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	PTFA261301EV1	INFINEON	0625/0707	DIP	1265	全新原裝現(xiàn)貨絕對(duì)自己公司特價(jià)庫(kù)	詢價(jià)
深圳市正納電子有限公司	PTFC270101M	Infineon(英飛凌)	23+	NA	20094	原裝正品可支持驗(yàn)貨，歡迎咨詢	詢價(jià)
深圳市正邁科技有限公司	PTF14A-E	OMRON 歐姆龍	23+	原封原廠	10501	現(xiàn)貨原裝--電子元件更多數(shù)量咨詢/樣品批量支持 OMRO	詢價(jià)

更多PTF供應(yīng)商更新時(shí)間2026-1-20 17:06:00

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