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          首頁 >PTF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PTF080901F

          LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

          Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

          文件:205.95 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          PTF081301E

          Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

          Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab

          文件:289.44 Kbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          PTF081301F

          Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

          Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab

          文件:289.44 Kbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          PTF08A

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁數(shù):13 Pages

          OMRON

          歐姆龍

          PTF08A-E

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁數(shù):13 Pages

          OMRON

          歐姆龍

          PTF10007

          35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

          Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 MHz, 28 Volt

          文件:235.46 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF10009

          85 Watts, 1.0 GHz GOLDMOS??Field Effect Transistor

          Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. ? Performance at

          文件:228.56 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF10015

          50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor

          Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features

          文件:221.09 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF10019

          70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

          Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? INTERNALLY MATCHED ? Performance at

          文件:322.62 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF10019

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. FEATURES: ? 70 W, 860-960 MHz ? Internally matched ? Omnigold? Metalization System ? Silicon Nitride Passivated

          文件:43.23 Kbytes 頁數(shù):1 Pages

          ASI

          技術(shù)參數(shù)

          • 電流:

            10A

          • 尺寸:

            --

          • 熔斷特性:

            --

          • 安規(guī):

            UL

          • 環(huán)保:

            --

          • 兼容規(guī)格:

            --

          供應(yīng)商型號品牌批號封裝庫存備注價格
          25+
          SOT6
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          ST
          12+
          TO-251
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價
          INFINEON
          0625/0707
          DIP
          1265
          全新原裝現(xiàn)貨絕對自己公司特價庫
          詢價
          murata
          13+
          NA
          1358
          原裝分銷
          詢價
          TI
          25+
          PQFP-100
          1740
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          INFINEON
          25+
          陶瓷高頻管
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          ERICSSON
          23+
          TO-62
          600
          專營高頻管模塊,全新原裝!
          詢價
          TI
          24+
          QFP100
          900
          現(xiàn)貨供應(yīng)
          詢價
          ERICSSON
          17+
          NA
          6200
          100%原裝正品現(xiàn)貨
          詢價
          MURATA
          24+
          200/包
          400
          原裝進(jìn)口現(xiàn)貨/只做原裝
          詢價
          更多PTF供應(yīng)商 更新時間2026-1-20 17:06:00
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