| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100 文件：245.76 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57 efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 文件：205.7 Kbytes 頁數(shù)：7 Pages | ERICSSON 愛立信 | ERICSSON | ||
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60 efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 MHz, 28 Vo 文件：175.49 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48 efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 MHz, 28 Volts 文件：106.96 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55 efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 M 文件：115.85 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50 efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reli 文件：215.46 Kbytes 頁數(shù)：6 Pages | ERICSSON 愛立信 | ERICSSON | ||
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40 efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. 文件：108.33 Kbytes 頁數(shù)：5 Pages | ERICSSON 愛立信 | ERICSSON | ||
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43 efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? 文件：256.72 Kbytes 頁數(shù)：5 Pages | ERICSSON 愛立信 | ERICSSON | ||
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53 efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. ? INTERNALLY MATCHED ? Performance a 文件：253.11 Kbytes 頁數(shù)：7 Pages | ERICSSON 愛立信 | ERICSSON | ||
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50 efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and re 文件：288.75 Kbytes 頁數(shù)：7 Pages | ERICSSON 愛立信 | ERICSSON |
技術(shù)參數(shù)
- 電流：
10A
- 尺寸：
--
- 熔斷特性：
--
- 安規(guī)：
UL
- 環(huán)保：
--
- 兼容規(guī)格：
--
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
25+ |
SOT6 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | |||
ST |
12+ |
TO-251 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
INFINEON |
0625/0707 |
DIP |
1265 |
全新原裝現(xiàn)貨絕對自己公司特價庫 |
詢價 | ||
murata |
13+ |
NA |
1358 |
原裝分銷 |
詢價 | ||
TI |
25+ |
PQFP-100 |
1740 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
INFINEON |
25+ |
陶瓷高頻管 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
ERICSSON |
23+ |
TO-62 |
600 |
專營高頻管模塊,全新原裝! |
詢價 | ||
TI |
24+ |
QFP100 |
900 |
現(xiàn)貨供應(yīng) |
詢價 | ||
ERICSSON |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MURATA |
24+ |
200/包 |
400 |
原裝進(jìn)口現(xiàn)貨/只做原裝 |
詢價 |
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