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          首頁 >PTF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PTF10162

          18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

          Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55 efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 M

          文件:341.34 Kbytes 頁數(shù):8 Pages

          ERICSSON

          愛立信

          PTF10193

          12 Watts, 860-960 MHz GOLDMOS??Field Effect Transistor

          Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60 efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifeti

          文件:331.91 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF10195

          125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

          Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53 efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. ? INTERNALLY MATCHED ?

          文件:328.96 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF102027

          40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor

          Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53 efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. ? Performance at 960 MHz, 26 Volts - Output Po

          文件:207.16 Kbytes 頁數(shù):6 Pages

          ERICSSON

          愛立信

          PTF102028

          18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

          Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55 efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? Performance at 960 MHz,

          文件:219.86 Kbytes 頁數(shù):7 Pages

          ERICSSON

          愛立信

          PTF11A

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁數(shù):13 Pages

          OMRON

          歐姆龍

          PTF14A

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁數(shù):13 Pages

          OMRON

          歐姆龍

          PTF14A-E

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁數(shù):13 Pages

          OMRON

          歐姆龍

          PTF180101

          LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

          Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB

          文件:310.59 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          PTF180101M

          High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz

          Description The PTF180101M is an unmatched 10-watt GOLDMOS? FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical EDGE performance - Average output po

          文件:314.5 Kbytes 頁數(shù):8 Pages

          INFINEON

          英飛凌

          技術(shù)參數(shù)

          • 電流:

            10A

          • 尺寸:

            --

          • 熔斷特性:

            --

          • 安規(guī):

            UL

          • 環(huán)保:

            --

          • 兼容規(guī)格:

            --

          供應商型號品牌批號封裝庫存備注價格
          25+
          SOT6
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          ST
          12+
          TO-251
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應。
          詢價
          INFINEON
          0625/0707
          DIP
          1265
          全新原裝現(xiàn)貨絕對自己公司特價庫
          詢價
          murata
          13+
          NA
          1358
          原裝分銷
          詢價
          TI
          25+
          PQFP-100
          1740
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          INFINEON
          25+
          陶瓷高頻管
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          ERICSSON
          23+
          TO-62
          600
          專營高頻管模塊,全新原裝!
          詢價
          TI
          24+
          QFP100
          900
          現(xiàn)貨供應
          詢價
          ERICSSON
          17+
          NA
          6200
          100%原裝正品現(xiàn)貨
          詢價
          MURATA
          24+
          200/包
          400
          原裝進口現(xiàn)貨/只做原裝
          詢價
          更多PTF供應商 更新時間2026-1-20 17:06:00
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