30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. ? INTERNALLY MATCHED ? Guaranteed Pe

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ERICSSON

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30 Watts, 1.93?.99 GHz GOLDMOS Field Effect Transistor

Ericsson

愛立信

650 V, 10 A low VF power Schottky silicon carbide diode

Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? Operating Tj from -40 °C to 175 °C ? D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. ? ECOPACK2 compliant component

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STMICROELECTRONICS

意法半導(dǎo)體

650 V, 10 A low VF power Schottky silicon carbide diode

Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? Operating Tj from -40 °C to 175 °C ? D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. ? ECOPACK2 compliant component

文件：395.95 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

650 V, 10 A power Schottky silicon carbide diode

Features ? Less than 1 mm height package ? High creepage package ? No or negligible reverse recovery ? Temperature independent switching behavior ? High forward surge capability ? Very low drop forward voltage ? Power efficient product ? ECOPACK2 compliant component Description This 10

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STMICROELECTRONICS

意法半導(dǎo)體