TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

文件：69.19 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：343.84 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is sup

文件：80.78 Kbytes 頁(yè)數(shù)：10 Pages

PHI

PHI

Isc N-Channel MOSFET Transistor

文件：249.34 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：54.43 Kbytes 頁(yè)數(shù)：7 Pages

PHI

PHI