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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB69N03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.27 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB69N03T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:66.11 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB6N50E

    PowerMOS transistors Avalanche energy rated

    GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N50E is supplied

    文件:77.79 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB6N60E

    PowerMOS transistors Avalanche energy rated

    GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

    文件:74.78 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB71NQ03LT

    TrenchMOS logic level FET

    Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

    文件:265.02 Kbytes 頁數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB71NQ03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.51 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB73N06T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 73A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.21 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB73N06T

    N-channel enhancement mode field-effect transistor

    Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHP73N06T in SOT78 (TO-220AB) PHB73N06T in SOT404 (D2-PAK). Features ■ Fast switching ■ Very low on-state resistance. Applications ■ Genera

    文件:264.2 Kbytes 頁數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB78NQ03LT

    N-channel enhancement mode field-effect transistor

    Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS? technology. Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK). Features ■ Low on-state resistan

    文件:292.53 Kbytes 頁數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB78NQ03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:345.28 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價格
    PH
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    BGA
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    更多PHB供應(yīng)商 更新時間2026-1-22 9:01:00

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