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          首頁 >PHB50N03>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHB50N03

          TrenchMOS transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

          文件:63.66 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHB50N03

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance ? Logic level

          文件:108.76 Kbytes 頁數(shù):11 Pages

          PHI

          PHI

          PHI

          PHB50N03

          TrenchMOS transistor Standard level FET

          恩XP

          恩XP

          PHB50N03LT

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance ? Logic level

          文件:108.76 Kbytes 頁數(shù):11 Pages

          PHI

          PHI

          PHI

          PHB50N03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:344.71 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHB50N03T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:344.81 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHB50N03T

          TrenchMOS transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

          文件:63.66 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          供應商型號品牌批號封裝庫存備注價格
          24+
          3000
          公司存貨
          詢價
          PHI
          17+
          TO-263
          6200
          詢價
          恩XP
          23+
          TO-263
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          TOSHIBA/東芝
          23+
          TO-220SIS
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          PHI
          25+
          TO-263
          20000
          普通
          詢價
          恩XP
          2022+
          12888
          原廠代理 終端免費提供樣品
          詢價
          PHI
          23+
          TO-263
          125800
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          PHI
          23+
          TO-263
          89630
          當天發(fā)貨全新原裝現(xiàn)貨
          詢價
          PHI
          20+
          TO-263
          32500
          現(xiàn)貨很近!原廠很遠!只做原裝
          詢價
          N
          25+
          SOT404(D
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          更多PHB50N03供應商 更新時間2026-1-20 10:21:00
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