RF Power LDMOS transistor

The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, lineari Excellent thermal stability\nCommon source configuration\nP\nOUT=3 W mith 20dB gain@500 MHz\nNew leadless plastic package\nESD protection\nSupplied in tape and reel of 3 K units\nIn compliance with 2002/95/EC european directive;

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RF Power Transistors The LdmoST Plastic FAMILY

Description The PD54003L-E is a common source N-Channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the exce

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Package：8-PowerVDFN；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANSISTOR RF 5X5 POWERFLAT

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes 頁數(shù)：27 Pages

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