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首頁 >PD55003S-E>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
PD55003S-E	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind 文件：473.99 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003S-E-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent 文件：468.27 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003S-E	文件：100 bytes Page：1 Pages	Package：PowerSO-10 裸露底部焊盤；包裝：托盤類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 40V 500MHZ PWRSO10	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003STR-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent 文件：468.27 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003STR-E	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind 文件：473.99 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003TR-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent 文件：468.27 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

產(chǎn)品屬性

產(chǎn)品編號(hào)：
PD55003S-E
制造商：
STMicroelectronics
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻
包裝：
托盤
晶體管類型：
LDMOS
頻率：
500MHz
增益：
17dB
額定電流（安培）：
2.5A
功率 - 輸出：
3W
封裝/外殼：
PowerSO-10 裸露底部焊盤
供應(yīng)商器件封裝：
PowerSO-10RF（直引線）
描述：
FET RF 40V 500MHZ PWRSO10

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市旺財(cái)半導(dǎo)體有限公司	PD55003S-E	ST	23+		1688	房間現(xiàn)貨庫存:QQ:373621633	詢價(jià)
深圳市高捷芯城科技有限公司	PD55003S-E	ST(意法半導(dǎo)體)	25+	N/A	21000	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢價(jià)
深圳市一線半導(dǎo)體有限公司	PD55003S-E	ST	24+	PowerSO-10	496		詢價(jià)
深圳市海天鴻電子科技有限公司	PD55003S-E	ST	1708+	?	14860	只做原裝進(jìn)口,假一罰十	詢價(jià)
深圳市振宏微科技有限公司	PD55003S-E	ST	23+	原廠封裝	13528	振宏微原裝正品,假一罰百	詢價(jià)
深圳市科雨電子有限公司	PD55003S-E	STM	25+	SOP-10	326	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)
深圳市易訊博科技有限公司	PD55003S-E		22+	NA	3000	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市賽特興科技有限公司	PD55003S-E	ST	23+	原廠原封	16900	正規(guī)渠道,只有原裝!	詢價(jià)
深圳市鵬順微電子科技有限公司	PD55003S-E	STMicroelectronics	2022+	PowerSO-10RF(直引線)	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市英博爾電子有限公司	PD55003S-E	ST	2年內(nèi)	NA	150000	英博爾原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商	詢價(jià)

更多PD55003S-E供應(yīng)商更新時(shí)間2026-1-19 10:05:00

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