RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

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射頻金屬氧化物半導(dǎo)體場效應(yīng)(RF MOSFET)晶體管 POWER R.F. N-Ch Trans

ST

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Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF N-CH FET POWERSO-10RF

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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC European directive Description The STAP85025 is a common source N-channel, enhancement-mode la

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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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