RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

文件：376.64 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

35W 13.6V 870MHz LDMOS，PowerSO-10RF塑料封裝

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linea ? Excellent thermal stability \n? Common source configuration \n? POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V \n? Plastic package \n? ESD protection \n? In compliance with the 2002/95/EC1 European directive;

ST

意法半導體

Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 870MHZ

STMICROELECTRONICS

意法半導體