RF Power LDMOS transistor

The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellent gain, linear ? Excellent thermal stability\n? Common source configuration\n? POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V? Plastic package\n? ESD protection\n? In compliance with the 2002/95/EC European directive;

ST

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RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 870MHZ

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

文件：376.43 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體