RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

25W 12.5V 500MHz LDMOS，powerSO-10RF塑料封裝

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a ? Excellent thermal stability \n? Common source configuration \n? POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V \n? New RF plastic package;

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Package：PowerSO-10 裸露底部焊盤；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO10

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