RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

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STMICROELECTRONICS

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes 頁數：25 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes 頁數：25 Pages

STMICROELECTRONICS

意法半導體

18W 28V HF - 1GHz LDMOS晶體管，PSO-10RF塑料封裝

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit ? Excellent thermal stability \n? Common source configuration \n? POUT = 18 W with 16.5dB gain@945 MHz/28 V \n? New RF plastic package;

ST

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Package：PowerSO-10 裸露底部焊盤；包裝：散裝 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO10

STMICROELECTRONICS

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