RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導體

6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit ? Excellent thermal stability\n? Common source configuration? POUT = 6 W with 15dB gain @ 945 MHz / 28 V\n? New RF plastic package;

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Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO-10

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