RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

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MOTOROLA

摩托羅拉

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

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MACOM

RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features ? Enhanced ther

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MA-COM

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf

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MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance at 175 MHz, 50 V: Output P

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MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

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MACOM

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

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ASI

Broadband RF Power MOSFET Broadband RF Power MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

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MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. N–Channel enhancement mode MOSFET ? Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 17 dB (typ.) Efficiency = 45 (typ.)

文件：175.67 Kbytes 頁數(shù)：7 Pages

MACOM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

文件：161.75 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉