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          首頁 >MRF1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF13750H

          RF Power LDMOS Transistors

          RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ?

          文件:505.8 Kbytes 頁數(shù):19 Pages

          恩XP

          恩XP

          MRF13750HS

          RF Power LDMOS Transistors

          RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ?

          文件:505.8 Kbytes 頁數(shù):19 Pages

          恩XP

          恩XP

          MRF138

          N-Channel Enhancement Mode VHF POWER MOSFET

          DESCRIPTION: The ASI MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: ? PG = 17 dB Typ. at 30 W /30MHz ? 30:1 Load VSWR Capability ? Omnigold? Metalization System

          文件:18.72 Kbytes 頁數(shù):1 Pages

          ASI

          MRF138

          VHP POWER MOSFET

          DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: ? PG = 17 dB Typ. at 30 W /30MHz ? 30:1 Load VSWR Capability ? Omnigold? Metalization System

          文件:84.34 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MRF140

          The RF MOSFET Line 150W, to 150MHz, 28V

          Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode ? Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) ? Superior high order IMD ? IMD(d3) (150 W PEP):

          文件:331.02 Kbytes 頁數(shù):10 Pages

          MA-COM

          MRF140

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

          文件:163.87 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF140

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

          文件:204.27 Kbytes 頁數(shù):8 Pages

          MACOM

          MRF141

          N-CHANNEL BROADBAND RF POWER MOSFET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

          文件:205.5 Kbytes 頁數(shù):10 Pages

          MACOM

          MRF141

          RF FIELD-EFFECT POWER TRANSISTOR

          DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.

          文件:50 Kbytes 頁數(shù):4 Pages

          ASI

          MRF141

          N-CHANNEL BROADBAND RF POWER MOSFET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

          文件:160.63 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-21 14:30:00
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