RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

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ASI

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf

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MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance at 175 MHz, 50 V: Output P

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MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

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MACOM

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

文件：405 Kbytes 頁數(shù)：9 Pages

MA-COM

RF Power Field-Effect Transistor

文件：405 Kbytes 頁數(shù)：9 Pages

MA-COM

RF Power Field-Effect Transistor

文件：883.61 Kbytes 頁數(shù)：10 Pages

MA-COM

300 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.\n? Guaranteed Performance at 175 MHz, 50 V:\n?? Output Pow

恩XP

1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·Guaranteed Performance at 175 MHz, 50 V:\n·Nitride Passivated Die for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power\n·Low Thermal Resistance — 0.35°C/W\n·Efficiency — 50%\n·Gain — 14 dB (16 dB Typ)\n·Output Power — 300 W;

MACOM

RF FIELD-EFFECT POWER TRANSISTOR

ASI Semiconductor