Broadband RF Power MOSFET Broadband RF Power MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

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MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

文件：161.75 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. N–Channel enhancement mode MOSFET ? Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 17 dB (typ.) Efficiency = 45 (typ.)

文件：175.67 Kbytes 頁數(shù)：7 Pages

MACOM

Broadband RF Power MOSFET 600W, to 80MHz, 50V

文件：293.84 Kbytes 頁數(shù)：9 Pages

MA-COM

600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range.? Specified 50 Volts, 30 MHz Characteristics\nOutput Power = 600 Watts\nPower Gain = 17 dB (Typ)\nEfficiency = 45% (Typ)

恩XP

Broadband RF Power MOSFET 600W, to 80MHz, 50V

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. ·N–Channel enhancement mode MOSFET\n·Specified 50 volts, 30 MHz Characteristics -Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.);

MACOM

射頻金屬氧化物半導(dǎo)體場效應(yīng)(RF MOSFET)晶體管 RF Transistor

ASI Semiconductor

Package：368-03；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 125V 100MHZ 368-03

MACOM Technology Solutions

Broadband RF Power MOSFET

文件：293.84 Kbytes 頁數(shù)：9 Pages

MA-COM

Broadband RF Power MOSFET

文件：735.96 Kbytes 頁數(shù)：10 Pages

MA-COM