RF Power FET 150W, to 175MHz, 28V

RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.

文件：337.87 Kbytes 頁數(shù)：11 Pages

MA-COM

RF Power FET 300W, 175MHz, 28V

RF Power FET 300W, 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ? G

文件：431.73 Kbytes 頁數(shù)：11 Pages

MA-COM

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：21.77 Kbytes 頁數(shù)：1 Pages

ASI

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：143.32 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：220.57 Kbytes 頁數(shù)：9 Pages

MACOM

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：87.89 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. ? Superior High Order IMD ? Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

文件：144.93 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

RF Power Field-Effect Transistor

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. ? Superior High Order IMD ? Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power

文件：95.99 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: ? PG = 15 dB Typ. at 30 W /175 MHz ? ηD = 50 Typ. at 30 W /30 MHz ? Omnigold? Metalization System

文件：42.93 Kbytes 頁數(shù)：1 Pages

ASI

Designed for power amplifier applications in industrial

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ? Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) ? Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

文件：84.36 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司