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          首頁 >MRF1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF148A

          Linear RF Power FET 30W, to 175MHz, 50V

          Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ? Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) ? Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

          文件:285.74 Kbytes 頁數(shù):7 Pages

          MA-COM

          MRF150

          RF Power FET 150W, to 150MHz, 50V

          Designed primarily for linear large-signal output stages up to 150 MHz ? Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) ? Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

          文件:285.58 Kbytes 頁數(shù):9 Pages

          MA-COM

          MRF150

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

          文件:148.54 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF150

          SILICON RF POWER MOSFET

          DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

          文件:19.91 Kbytes 頁數(shù):1 Pages

          ASI

          MRF150

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (

          文件:183.53 Kbytes 頁數(shù):8 Pages

          MACOM

          MRF1500

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR ? Herme

          文件:103.24 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF15060

          RF POWER BIPOLAR TRANSISTORS

          The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

          文件:164.33 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF15060S

          RF POWER BIPOLAR TRANSISTORS

          The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

          文件:164.33 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF1507

          LATERAL NCHANNEL BROADBAND RF POWER MOSFET

          The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. ? Specified Performance @ 520

          文件:206.31 Kbytes 頁數(shù):12 Pages

          MOTOROLA

          摩托羅拉

          MRF1507T1

          LATERAL NCHANNEL BROADBAND RF POWER MOSFET

          The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. ? Specified Performance @ 520

          文件:206.31 Kbytes 頁數(shù):12 Pages

          MOTOROLA

          摩托羅拉

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-20 14:30:00
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