| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistor RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 文件:229.05 Kbytes 頁數(shù):12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 文件:472.35 Kbytes 頁數(shù):12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 頁數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 頁數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件:277.99 Kbytes 頁數(shù):15 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli 文件:288.84 Kbytes 頁數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | FREESCALE | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common 文件:345.48 Kbytes 頁數(shù):16 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Features ? Excellent Thermal Stability ? Characterized with Series Equivalent Large-Signal Impedance Parameters ? N Suffix Indicates Lead-Free Terminations. RoHS Compliant. ? In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. 文件:794.12 Kbytes 頁數(shù):19 Pages | 恩XP | 恩XP | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件:757.51 Kbytes 頁數(shù):20 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件:553.44 Kbytes 頁數(shù):16 Pages | MOTOROLA 摩托羅拉 | MOTOROLA |
技術參數(shù)
- Min Frequency(MHz):
960
- Max Frequency(MHz):
1215
- Bias Voltage(V):
28.0
- Pout(W):
5.00
- Gain(dB):
8.50
- Efficiency(%):
45
- Type:
Bipolar
- Package:
Flange Ceramic Pkg
- Package Category:
Ceramic Flange Mount
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
1100 |
真實現(xiàn)貨庫存 |
詢價 | ||||
FSL |
24+ |
SMD |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
M/A-COM |
25+ |
SMD |
30000 |
代理全新原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 | ||
恩XP |
25+ |
TO-220-3 |
8880 |
原裝認準芯澤盛世! |
詢價 | ||
恩XP |
143 |
只做正品 |
詢價 | ||||
ON/ |
26+ |
SOT143 |
12000 |
原裝,正品 |
詢價 | ||
M/A-COM |
25+ |
TO-59 |
500 |
原廠原裝,價格優(yōu)勢 |
詢價 | ||
FREESCALE |
2023+ |
TO-272 |
11000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 | ||
原廠 |
2023+ |
模塊 |
600 |
專營模塊,繼電器,公司原裝現(xiàn)貨 |
詢價 |
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