N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

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MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：220.57 Kbytes 頁數(shù)：9 Pages

MACOM

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：87.89 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：21.77 Kbytes 頁數(shù)：1 Pages

ASI

RF Power FET 300W, 175MHz, 28V

RF Power FET 300W, 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ? G

文件：431.73 Kbytes 頁數(shù)：11 Pages

MA-COM

RF Power FET 300W, 175MHz, 28V

文件：431.73 Kbytes 頁數(shù)：11 Pages

MA-COM

RF Power FET

文件：431.73 Kbytes 頁數(shù)：11 Pages

MA-COM

TMOS

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ·Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%\n·Nitride PassivatedDie for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power\n·Low Thermal Resistance: 0.35°C/W;

MACOM

Package：375-04；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 2CH 65V 175MHZ 375-04

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