RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.

文件：50 Kbytes 頁數(shù)：4 Pages

ASI

RF Power FET 150W, to 175MHz, 28V

RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.

文件：337.87 Kbytes 頁數(shù)：11 Pages

MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：160.63 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：205.5 Kbytes 頁數(shù)：10 Pages

MACOM

RF Power FET 150W, to 175MHz, 28V

文件：337.87 Kbytes 頁數(shù)：11 Pages

MA-COM

RF Power MOSFET 150W, to 175MHz, 28V

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ·Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%\n·Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB\n·Low Thermal Resistance\n·Nitride Passivated Die for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power;

MACOM

N-CHANNEL BROADBAND RF POWER MOSFET

恩XP

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：87.89 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：143.32 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：220.57 Kbytes 頁數(shù)：9 Pages

MACOM