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          首頁 >MRF1>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF1090MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: ? Internal Input Matching Network ? PG = 8.4 dB at 90 W/1150 MHz ? Omnigold? Metalization System

          文件:17.75 Kbytes 頁數(shù):1 Pages

          ASI

          MRF1090MB

          Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

          Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W Peak Minimum gain = 8.4 dB ? 100 tested f

          文件:185.79 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF1090MX

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a

          文件:104.63 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF1090MX

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a

          文件:120.99 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF1090MX

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch at

          文件:127.63 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF1150MA

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB ? 100 Tested for Load Mismatch at

          文件:150.92 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF1150MA

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB ? 100 Tested for Load Mismatch

          文件:128.199 Kbytes 頁數(shù):5 Pages

          MOTOROLA

          摩托羅拉

          MRF1150MA

          Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

          Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB ? 100 tested

          文件:196.12 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF1150MB

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB ? 100 Tested for Load Mismatch

          文件:128.199 Kbytes 頁數(shù):5 Pages

          MOTOROLA

          摩托羅拉

          MRF1150MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1150MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 7.8 dB at 150 W/1090 MHz ? Omnigold? Metalization System

          文件:19.41 Kbytes 頁數(shù):2 Pages

          ASI

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-20 14:30:00
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