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          首頁(yè)
                >MRF1>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF1031
          UHF POWER TRANSISTOR
          
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz.
? Designed for Class A Linear Power Amplifiers
? Specified 25 Volt, 900 MHz Characteristics:
   Output Power — 3.0 Watts
   Power Gain — 7.5 dB Min, Class AB
?
          文件：54.46 Kbytes 頁(yè)數(shù)：2 Pages
          MOTOROLA
          摩托羅拉
          

          MRF1035
          MICROWAVE POWER TRANSISTOR
          
The RF Line
Microwave Pulse Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
? Guaranteed Performance @ 1090 MHz
   Output Power = 350 Watts Peak
   Gain = 8.5 dB Min, 9.0 dB (Typ)
? 100 Tested for Load Mismatch
          文件：101.57 Kbytes 頁(yè)數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF1035
          MICROWAVE POWER TRANSISTORS
          
The RF Line
Microwave Pulse Power Transistor
Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
? Guaranteed Performance @ 1090 MHz, 50 Vdc
   Output Power = 35 Watts Peak
   Minimum Gain = 10 dB
? 100 Tested for Loa
          文件：100.91 Kbytes 頁(yè)數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF1035
          MICROWAVE POWER TRANSISTOR NPN SILICON
          
The RF Line
Microwave Pulse Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
? Guaranteed Performance @ 1090 MHz
   Output Power = 350 Watts Peak
   Gain = 8.5 dB Min, 9.0 dB (Typ)
? 100 Tested for Load Mismatch
          文件：147.24 Kbytes 頁(yè)數(shù)：4 Pages
          MACOM
          

          MRF10350
          MICROWAVE POWER TRANSISTOR
          
The RF Line
Microwave Pulse Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
? Guaranteed Performance @ 1090 MHz
   Output Power = 350 Watts Peak
   Gain = 8.5 dB Min, 9.0 dB (Typ)
? 100 Tested for Load Mismatch
          文件：101.57 Kbytes 頁(yè)數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF10350
          MICROWAVE POWER TRANSISTOR NPN SILICON
          
The RF Line
Microwave Pulse Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
? Guaranteed Performance @ 1090 MHz
   Output Power = 350 Watts Peak
   Gain = 8.5 dB Min, 9.0 dB (Typ)
? 100 Tested for Load Mismatch
          文件：147.24 Kbytes 頁(yè)數(shù)：4 Pages
          MACOM
          

          MRF10350
          NPN SILICON RF POWER TRANSISTOR
          
DESCRIPTION:
The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz.
FEATURES:
? Internal Input Matching Network
? PG = 8.5 dB at 350 W/1090 MHz
? Omnigold? Metalization System
          文件：18.73 Kbytes 頁(yè)數(shù)：1 Pages
          ASI
          

          MRF10350
          Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz
          
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
? Guaranteed performance @ 1090 MHz
   Output power = 350 W Peak
   Gain = 8.5 dB min, 9.0 dB (typ.)
? 100 tested for load mismatch at all phase angles with 10:1 VSWR
? Hermeticall
          文件：188.78 Kbytes 頁(yè)數(shù)：6 Pages
          MA-COM
          

          MRF1035MB
          MICROWAVE POWER TRANSISTORS
          
The RF Line
Microwave Pulse Power Transistor
Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
? Guaranteed Performance @ 1090 MHz, 50 Vdc
   Output Power = 35 Watts Peak
   Minimum Gain = 10 dB
? 100 Tested for Loa
          文件：100.91 Kbytes 頁(yè)數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF1035MB
          NPN SILICON RF POWER TRANSISTOR
          
DESCRIPTION:
The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz.
FEATURES:
? Internal Input Matching Network
? PG = 10 dB at 35 W/1090 MHz
? Omnigold? Metalization System
          文件：17.7 Kbytes 頁(yè)數(shù)：1 Pages
          ASI
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Min Frequency(MHz)：
            960
          • Max Frequency(MHz)：
            1215
          • Bias Voltage(V)：
            28.0
          • Pout(W)：
            5.00
          • Gain(dB)：
            8.50
          • Efficiency(%)：
            45
          • Type：
            Bipolar
          • Package：
            Flange Ceramic Pkg
          • Package Category：
            Ceramic Flange Mount
          
            
          
        
          
            
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