| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：2.58557 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD014 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? For automatic insertion ? End stackable ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge 文件：868.89 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD014 | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
文件：171.17 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFD014 | Power MOSFET 文件：2.02521 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD014 | Power MOSFET 文件：2.02521 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD014 | Power MOSFET ? Dynamic dV/dt rating\n? For automatic insertion\n? End stackable; | Vishay 威世 | Vishay | |
IRFD014 | HEXFET Power MOSFET | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? For automatic insertion ? End stackable ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge 文件：868.89 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：2.58557 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：2.02521 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFD014
- 功能描述：
MOSFET N-Chan 60V 1.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
24+ |
DIP-4 |
320 |
詢價 | ||||
IR |
23+ |
DIP-4 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
25+ |
DIP-4 |
1000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
24+ |
原廠封裝 |
1144 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
18+ |
DIP4 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
NA |
SSOP |
1008 |
優(yōu)勢庫存 |
詢價 | |||
IR |
23+ |
65480 |
詢價 | ||||
IR |
25+ |
DIP |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
10000 |
全新原裝正品現(xiàn)貨 |
詢價 |
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