| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBC40L | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi 文件：984.33 Kbytes 頁數：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBC40L | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. 文件：350.66 Kbytes 頁數：10 Pages | IRF | IRF | |
IRFBC40L | 絲?。?a target="_blank" title="Marking" href="/i2pak/marking.html">I2PAK；Package：TO-262；iscN-Channel MOSFET Transistor 文件：366.87 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | |
IRFBC40L | Power MOSFET 文件：328.07 Kbytes 頁數：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements 文件：148.34 Kbytes 頁數：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET-R POWER MOSFET HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A) 文件：176.22 Kbytes 頁數：8 Pages | IRF | IRF | ||
Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements 文件：148.34 Kbytes 頁數：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi 文件：984.33 Kbytes 頁數：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET? Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. 文件：360.09 Kbytes 頁數：10 Pages | IRF | IRF | ||
Power MOSFET 文件：285.8 Kbytes 頁數：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數
- 型號：
IRFBC40L
- 功能描述：
MOSFET N-Chan 600V 6.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
710 |
詢價 | |||
IR |
2015+ |
TO-262 |
12500 |
全新原裝,現貨庫存長期供應 |
詢價 | ||
IR |
24+ |
原廠封裝 |
404 |
原裝現貨假一罰十 |
詢價 | ||
IR/VISH |
24+ |
65230 |
詢價 | ||||
VISHAY |
25+ |
TO-262 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
23+ |
TO220 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
IR |
25+ |
TO-220 |
10000 |
原裝現貨假一罰十 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
IR |
TO-262 |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Vishay Siliconix |
2022+ |
TO-262-3,長引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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