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          首頁 >IRFBC40AS>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRFBC40AS

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40AS

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:387.52 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40AS

          Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

          SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

          文件:111.63 Kbytes 頁數(shù):9 Pages

          IRF

          IRFBC40AS

          絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;iscN-Channel MOSFET Transistor

          文件:322.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRFBC40AS_V01

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:387.52 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40ASPBF

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40ASTRL

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40ASTRLPBF

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40ASTRR

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40ASTRRPBF

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            IRFBC40AS

          • 功能描述:

            MOSFET N-Chan 600V 6.2 Amp

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          19+
          TO-263
          12000
          詢價(jià)
          IR
          24+
          TO-263
          48650
          優(yōu)勢(shì)庫(kù)存實(shí)單價(jià)可談
          詢價(jià)
          IR
          2015+
          D2-Pak
          12500
          全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
          詢價(jià)
          IR
          24+
          D2-Pak
          8866
          詢價(jià)
          IR
          17+
          TO-263
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          IR
          23+
          TO-263
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          IR
          25+23+
          TO263
          74508
          絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          IR
          24+
          TO-263
          65300
          一級(jí)代理/放心購(gòu)買!
          詢價(jià)
          IR
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          更多IRFBC40AS供應(yīng)商 更新時(shí)間2026-1-18 16:04:00
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