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          首頁(yè) >IRF640A>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF640A

          Advanced Power MOSFET

          FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Lower RDS(ON) : 0.144 ?(Typ.)

          文件:260.95 Kbytes 頁(yè)數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF640A

          isc N-Channel MOSFET Transistor

          DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.144Ω(TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

          文件:68.86 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF640A

          Advanced Power MOSFET

          ONSEMI

          安森美半導(dǎo)體

          IRF640B

          200V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

          文件:916.61 Kbytes 頁(yè)數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF640B

          200V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:1.68999 Mbytes 頁(yè)數(shù):9 Pages

          KERSEMI

          IRF640FI

          isc N-Channel MOSFET Transistor

          DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.180Ω(?TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

          文件:65.77 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          詳細(xì)參數(shù)

          • 型號(hào):

            IRF640A

          • 制造商:

            FAIRCHILD

          • 制造商全稱:

            Fairchild Semiconductor

          • 功能描述:

            Advanced Power MOSFET

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          FAIRCHILD/仙童
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          仙童
          06+
          TO-220
          5000
          原裝庫(kù)存
          詢價(jià)
          SEC
          24+
          TO-220
          4250
          詢價(jià)
          FSC
          25+
          TO220
          28
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          FAIRCHILD
          2015+
          TO-220
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
          詢價(jià)
          23+
          原廠封裝
          9888
          專做原裝正品,假一罰百!
          詢價(jià)
          FSC
          TO-220
          14000
          現(xiàn)貨庫(kù)存
          詢價(jià)
          FAIRCHILD
          23+
          TO-220
          65480
          詢價(jià)
          FAIRCHILD/仙童
          25+
          TO-220
          30000
          全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
          詢價(jià)
          FSC
          1923+
          TO-220
          6896
          原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
          詢價(jià)
          更多IRF640A供應(yīng)商 更新時(shí)間2026-1-18 13:02:00
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