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          首頁(yè) >IRF640L>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF640L

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

          文件:2.11507 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF640L

          Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

          文件:228.71 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRF640LPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

          文件:2.11507 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF640L

          Power MOSFET

          Surface mount\nLow-profile through-hole\nAvailable in tape and reel;

          Vishay

          威世

          IRF640L

          Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

          Infineon

          英飛凌

          詳細(xì)參數(shù)

          • 型號(hào):

            IRF640L

          • 功能描述:

            MOSFET N-CH 200V 18A TO-262

          • RoHS:

          • 類別:

            分離式半導(dǎo)體產(chǎn)品 >> FET - 單

          • 系列:

            -

          • 標(biāo)準(zhǔn)包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點(diǎn):

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時(shí)的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應(yīng)商設(shè)備封裝:

            TO-220FP

          • 包裝:

            管件

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          05+
          原廠原裝
          451
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          IR
          24+
          TO-262
          8866
          詢價(jià)
          IR
          23+
          TO-220
          5000
          原裝正品,假一罰十
          詢價(jià)
          VISHAY
          25+
          TO-262
          3000
          就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
          詢價(jià)
          Vishay Siliconix
          22+
          TO2623 Long Leads I2Pak TO262A
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          IRF640L
          25+
          491
          491
          詢價(jià)
          Vishay Siliconix
          2022+
          TO-262-3,長(zhǎng)引線,I2Pak,TO-26
          38550
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
          詢價(jià)
          IR
          23+
          TO-220
          59417
          ##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
          詢價(jià)
          IR
          2025+
          TO-220
          4675
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價(jià)
          IR
          23+
          TO-262
          8000
          只做原裝現(xiàn)貨
          詢價(jià)
          更多IRF640L供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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