| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF6609 | Power MOSFET Description The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge 文件：230.62 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRF6609 | Low Conduction Losses Description The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge 文件：264.79 Kbytes 頁數(shù)：11 Pages | IRF | IRF | |
IRF6609 | Low Conduction Losses | Infineon 英飛凌 | Infineon | |
DirectFETPower MOSFET Description The IRF6609PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：271.58 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Low Conduction Losses Description The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge 文件：264.79 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
DirectFETPower MOSFET Description The IRF6609PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：271.58 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
DirectFETPower MOSFET Description The IRF6609PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：271.58 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Ideal for CPU Core DC-DC Converters 文件：271.58 Kbytes 頁數(shù)：11 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號：
IRF6609
- 功能描述：
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價(jià) | |||
Infineon Technologies |
21+ |
DIRECTFET? MT |
4800 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)! |
詢價(jià) | ||
INFINEON |
25+ |
DIRECTFET? |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IRF |
25+ |
SMD |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
23+ |
QFN |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
IR |
06+ |
SMD |
4000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 MT |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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