Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導體

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

HEXFET Power MOSFET

文件：174.94 Kbytes 頁數(shù)：6 Pages

IRF

Advanced Power MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.214?(Typ.)

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FAIRCHILD

仙童半導體