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          首頁(yè) >IRF640N>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF640N

          Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

          文件:155.4 Kbytes 頁(yè)數(shù):11 Pages

          IRF

          IRF640N

          N-Channel Power MOSFETs 200V, 18A, 0.15ohm

          Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

          文件:160.31 Kbytes 頁(yè)數(shù):11 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF640N

          N-Channel MOSFET Transistor

          ? DESCRITION ? Efficient and reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤150m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

          文件:201.95 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF640N

          Advanced Process Technology

          Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

          文件:1.19709 Mbytes 頁(yè)數(shù):11 Pages

          KERSEMI

          IRF640N

          N-Channel MOSFET Transistor

          文件:338.66 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF640N

          Advanced Process Technology

          文件:248.99 Kbytes 頁(yè)數(shù):12 Pages

          IRF

          IRF640N

          HEXFET Power MOSFET

          文件:240.04 Kbytes 頁(yè)數(shù):11 Pages

          IRF

          IRF640NL

          N-Channel Power MOSFETs 200V, 18A, 0.15ohm

          Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

          文件:160.31 Kbytes 頁(yè)數(shù):11 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF640NL

          Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

          文件:155.4 Kbytes 頁(yè)數(shù):11 Pages

          IRF

          IRF640NL

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-262 packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching applic

          文件:288.63 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          技術(shù)參數(shù)

          • OPN:

            IRF640NPBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            200 V

          • RDS (on) @10V max:

            150 m?

          • ID @25°C max:

            18 A

          • QG typ @10V:

            44.7 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          23+
          TO-220
          3500
          全新原裝,公司現(xiàn)貨銷(xiāo)售
          詢(xún)價(jià)
          IR
          13+
          TO-220/TO-263
          10000
          深圳市勤思達(dá)科技有限公司主營(yíng)IR系列,現(xiàn)貨供應(yīng)IRF640N,全新原裝,正品供應(yīng)。
          詢(xún)價(jià)
          IR
          24+
          TO-220
          50000
          深圳市弘為電子有限公司,是原裝現(xiàn)貨庫(kù)存為主的混合型供應(yīng)商,專(zhuān)注功率器件。 代理和分銷(xiāo):Infineon(英飛凌)+IR(國(guó)際整流器)、Yea Shin(臺(tái)灣亞昕)、Mosway(科域) 應(yīng)用領(lǐng)域:電源、電機(jī)控制與驅(qū)動(dòng)、家電、電池管理、電動(dòng)交通、汽車(chē)電子、工業(yè)控制、電焊機(jī)、節(jié)能照明
          詢(xún)價(jià)
          IR
          進(jìn)口原裝
          3000
          庫(kù)存現(xiàn)貨
          詢(xún)價(jià)
          IR
          25+
          TO-220
          4500
          原裝正品!現(xiàn)貨熱賣(mài)!
          詢(xún)價(jià)
          INFINEON/英飛凌
          25+
          TO-220
          32000
          INFINEON/英飛凌全新特價(jià)IRF640N即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢(xún)價(jià)
          FSC/IR
          24+
          TO-220
          11000
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)!
          詢(xún)價(jià)
          H
          24+
          TO 220
          157566
          明嘉萊只做原裝正品現(xiàn)貨
          詢(xún)價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢(xún)價(jià)
          IR
          24+
          TO-220
          48650
          原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本)
          詢(xún)價(jià)
          更多IRF640N供應(yīng)商 更新時(shí)間2026-1-20 16:00:00
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