14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

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isc N-Channel Mosfet Transistor

·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high sp

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14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching reg ? 14A, 275V\n? rDS(ON)= 0.280?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? 275VDC Rating-120VAC Line System Operation\n? Related Literature\n- TB334 “Guidelines for Soldering S;

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Trans MOSFET N-CH 275V 14A 3-Pin(3+Tab) TO-220AB

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