200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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FAIRCHILD

仙童半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：1.68999 Mbytes 頁數(shù)：9 Pages

KERSEMI

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.180Ω(?TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

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ISC

無錫固電

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 ? ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

文件：107.08 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

IRF640FP 18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ? Silicon Gate for Fast Switching Speeds ? Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperat

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FCI

富加宜