180 W, DC - 2.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high

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WOLFSPEED

180 W, DC - 2000 MHz, 50 V, GaN HEMT

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CREE

科銳

180 W; DC - 2 GHz; GaN HEMT

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; high ·Input Unmatched\n·180 W (CW) Minimum Pout\n·250 W Typical Pout\n·24 dB Typical Small Signal Gain\n·28 V and 50 V Operation;

MACOM

Package：440223；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 440223

WOLFSPEED

200W, 0.05-1.0GHz, 830292P, GaN HEMT, 50

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; high ·Input Unmatched\n·180 W (CW) Minimum Pout\n·250 W Typical Pout\n·24 dB Typical Small Signal Gain\n·28 V and 50 V Operation;

MACOM

Package：440223；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：960-1250MHZ, AMP W/ CGHV40180F

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