400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is mat

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WOLFSPEED

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes 頁數(shù)：11 Pages

CREE

科銳

400 W, 2.9 - 3.5 GHz, GaN HEMT

Description Wolfspeed’s CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra

文件：1.9263 Mbytes 頁數(shù)：21 Pages

WOLFSPEED

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes 頁數(shù)：11 Pages

CREE

科銳

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes 頁數(shù)：11 Pages

CREE

科銳

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

400 W, 50 ? Input/Output Matched, GaN HEMT 2.9 - 3.5 GHz

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

Package：440226；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：400W 50V GAN HEMT, 2.9-3.5GHZ

WOLFSPEED

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV35400F

WOLFSPEED