150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is

文件：1.28659 Mbytes 頁數(shù)：10 Pages

WOLFSPEED

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁數(shù)：10 Pages

CREE

科銳

150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems

The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) ?designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9?– 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/met ·Rated Power = 150 W @ TCASE = 85°C\n·Operating Frequency = 2.9 – 3.5 GHz\n·Transient 100 μsec – 300 μsec @ 20% Duty Cycle\n·13.5 dB Power Gain @ TCASE = 85°C\n·50 % Typical Drain Efficiency @ TCASE = 85°C\n·Input Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁數(shù)：10 Pages

CREE

科銳

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁數(shù)：10 Pages

CREE

科銳

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁數(shù)：10 Pages

CREE

科銳

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁數(shù)：10 Pages

CREE

科銳

150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems

Rated Power = 150 W @ TCASE = 85°COperating Frequency = 2.9 – 3.5 GHzTransient 100 μsec – 300 μsec @ 20% Duty Cycle13.5 dB Power Gain @ TCASE = 85°C50 % Typical Drain Efficiency @ TCASE = 85°CInput Matched<0.3 dB Pulsed Amplitude Droop ? Rated Power = 150 W @ TCASE = 85°C \n?Operating Frequency = 2.9 – 3.5 GHz \n?Transient 100 μsec – 300 μsec @ 20% Duty Cycle \n?13.5 dB Power Gain @ TCASE = 85°C \n?50 % Typical Drain Efficiency @ TCASE = 85°C \n?Input Matched \n?<0.3 dB Pulsed Amplitude Droop;

MACOM

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CGHV35150F DEV BOARD WITH HEMT

WOLFSPEED

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV35150F

WOLFSPEED