N-CHANNEL 800V - 13 廓 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：630.4 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-Channel MOSFET uses advanced trench technology

文件：1.37559 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-CHANNEL 800V - 13 廓 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：630.4 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 800V - 13 廓 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH??MOSFET

文件：630.4 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-channel 800 V, 13 Ohm typ., 1 A SuperMESH Zener protected Power MOSFET in a DPAK package

The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, specialcare is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements Typical R\nDS(on) = 13 ?\nExtremely high dv/dt capability\nESD improved capability\n100% avalanche tested\nNew high voltage benchmark\nGate charge minimized;

ST

意法半導體

N-channel 800 V, 13 Ohm typ., 1 A SuperMESH Power MOSFET in a DPAK package

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

意法半導體