N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh? technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

文件：943.32 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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Power MOSFET

文件：1.07811 Mbytes 頁數(shù)：9 Pages

VBSEMI

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N溝道525 V、1.28 Ohm、4.4 A UltraFASTmesh(TM) 功率MOSFET，DPAK封裝

This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. ? Outstanding dv/dt capability \n? Gate charge minimized \n? Very low intrinsic capacitances \n? Very low RDS(on) \n? Extremely low trr;

ST

意法半導(dǎo)體

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh? technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

文件：943.32 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 1.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.18 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh? Power MOSFET in a TO-220FP package

Features Outstanding dv/dt capability Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr Applications Switching applications Description This device is N-channel Power MOSFET developed using UltraFASTmesh? technology, which combines the advantage

文件：548.06 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體