isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：318.44 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/25nf20/marking.html">25NF20；Package：DPAK；Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET??Power MOSFET in a DPAK package

文件：848.51 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

汽車級N溝道200 V、0.10 Ohm典型值、18 A STripFET功率MOSFET，DPAK封裝

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high pa ? Designed for automotive applications and AEC-Q101 qualified \n? Extremely low gate charge \n? Exceptional dv/dt capability \n? Low gate input resistance \n? 100% avalanche tested;

ST

意法半導體

N-Channel 200 V (D-S) MOSFET

文件：1.00822 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體