isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, D

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ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/d3nk90z/marking.html">D3NK90Z；Package：DPAK；N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：662.23 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/d3nk90z/marking.html">D3NK90Z；Package：DPAK；N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：613.22 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導體

絲印：D3NK90Z；Package：DPAK；N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH? Power MOSFETs in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：563.35 Kbytes 頁數(shù)：24 Pages

STMICROELECTRONICS

意法半導體

N溝道900 V、4.1 Ohm典型值、3 A SuperMESH功率MOSFET，DPAK封裝

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

意法半導體

場效應管(MOSFET)

Tokmas

托克馬斯

N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH? Power MOSFETs in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：563.35 Kbytes 頁數(shù)：24 Pages

STMICROELECTRONICS

意法半導體