N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features ? Among the lowest RDS(on) on

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced SGT technology

文件：1.64749 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

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ISC

無錫固電

N溝道100 V、0.013 Ohm典型值、45 A STripFET F7功率MOSFET，DPAK封裝

該N-溝道功率MOSFETs利用STripFET?F7技術(shù)和增強(qiáng)型溝槽柵極結(jié)構(gòu)，可降低通態(tài)電阻，同時(shí)降低內(nèi)部電容和柵極電荷，從而使開關(guān)速度更快、能效更高。 ? 處于市面上最低的RDS(on)行列 \n? 出色的品質(zhì)因數(shù)（FoM） \n? 較低的Crss/Ciss比值使得其具有更強(qiáng)的抗EMI能力 \n? 堅(jiān)固的抗雪崩能力;

ST

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