Gate charge minimized

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STMICROELECTRONICS

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Power MOSFET

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VBSEMI

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N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH K3 Power MOSFET in a DPAK package

This SuperMESH3? Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable fo ? 100% avalanche tested\n? Extremely high dv/dt capability\n? Gate charge minimized? Very low intrinsic capacitance\n? Improved diode reverse recovery characteristics\n? Zener-protected;

ST

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N-channel 400 V, 3 廓, 1.8 A SOT-223 SuperMESH3 Power MOSFET

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STMICROELECTRONICS

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